IndiumV3, Main, Repository, bibRecord, 009B38

Indentation deformation of thin {111} GaAs and InSb foils : influence of polarity

Identifieur interne : 009B38 ( Main/Repository ); précédent : 009B37; suivant : 009B39

Indentation deformation of thin {111} GaAs and InSb foils : influence of polarity

Auteurs : RBID : Pascal:05-0310804

Descripteurs français

Pascal (Inist)
- Indentation, Essai Vickers, Interférométrie, Ecoulement plastique, Mouvement dislocation, Charge appliquée, Plasticité, Composé binaire, Semiconducteur, Couche mince, Gallium arséniure, Indium antimoniure, As Ga, GaAs, In Sb, InSb, 6220F, 6860B.

English descriptors

KwdEn :
- Applied load, Binary compounds, Dislocation motion, Gallium arsenides, Indentation, Indium antimonides, Interferometry, Plastic flow, Plasticity, Semiconductor materials, Thin films, Vickers test.

Abstract

{111} GaAs and InSb thin foils have been deformed by a Vickers indenter at different temperatures between room temperature and 370°C and under loads ranging from 0.4 to 1.9 N. Interferometry was used to observe the indented and opposite faces of thin foils and to analyse the plastic flow throughout the samples. Attention was paid to the polarity (A or B) of the specimens, as GaAs as well as InSb are known to show large difference between a and β dislocation mobilities. A model considering the influence of polarity is proposed to describe the material flow throughout thin samples and analyse differences observed between both semiconductors.

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Pascal:05-0310804

Le document en format XML

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<author><name sortKey="Patriarche, G" uniqKey="Patriarche G">G. Patriarche</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures, CNRS UPR 20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Largeau, L" uniqKey="Largeau L">L. Largeau</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures, CNRS UPR 20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Marcoussis</settlement>
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</author>
<author><name sortKey="Riviere, J P" uniqKey="Riviere J">J. P. Riviere</name>
<affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Laboratoire de Physique des Solides et de Cristallogénèse, UMR 8635, 1 Place Aristide Briand</s1>
<s2>92195 Meudon</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
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<country>France</country>
<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Meudon</settlement>
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</author>
<author><name sortKey="Le Bourhis, E" uniqKey="Le Bourhis E">E. Le Bourhis</name>
<affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Université de Poitiers, Laboratoire de Métallurgie Physique, UMR 6630 CNRS, SP2MI, Téléport 2, Boulevard Marie et Pierre Curie, BP 30179</s1>
<s2>86962 Futuroscope-Chasseneuil</s2>
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<country>France</country>
<placeName><region type="region" nuts="2">Poitou-Charentes</region>
<settlement type="city">Futuroscope-Chasseneuil</settlement>
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<orgName type="university">Université de Poitiers</orgName>
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<publicationStmt><idno type="inist">05-0310804</idno>
<date when="2005">2005</date>
<idno type="stanalyst">PASCAL 05-0310804 INIST</idno>
<idno type="RBID">Pascal:05-0310804</idno>
<idno type="wicri:Area/Main/Corpus">00A045</idno>
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<seriesStmt><idno type="ISSN">0950-0839</idno>
<title level="j" type="abbreviated">Philos. mag. lett.</title>
<title level="j" type="main">Philosophical magazine letters</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Applied load</term>
<term>Binary compounds</term>
<term>Dislocation motion</term>
<term>Gallium arsenides</term>
<term>Indentation</term>
<term>Indium antimonides</term>
<term>Interferometry</term>
<term>Plastic flow</term>
<term>Plasticity</term>
<term>Semiconductor materials</term>
<term>Thin films</term>
<term>Vickers test</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Indentation</term>
<term>Essai Vickers</term>
<term>Interférométrie</term>
<term>Ecoulement plastique</term>
<term>Mouvement dislocation</term>
<term>Charge appliquée</term>
<term>Plasticité</term>
<term>Composé binaire</term>
<term>Semiconducteur</term>
<term>Couche mince</term>
<term>Gallium arséniure</term>
<term>Indium antimoniure</term>
<term>As Ga</term>
<term>GaAs</term>
<term>In Sb</term>
<term>InSb</term>
<term>6220F</term>
<term>6860B</term>
</keywords>
</textClass>
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<front><div type="abstract" xml:lang="en">{111} GaAs and InSb thin foils have been deformed by a Vickers indenter at different temperatures between room temperature and 370°C and under loads ranging from 0.4 to 1.9 N. Interferometry was used to observe the indented and opposite faces of thin foils and to analyse the plastic flow throughout the samples. Attention was paid to the polarity (A or B) of the specimens, as GaAs as well as InSb are known to show large difference between a and β dislocation mobilities. A model considering the influence of polarity is proposed to describe the material flow throughout thin samples and analyse differences observed between both semiconductors.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Indentation deformation of thin {111} GaAs and InSb foils : influence of polarity</s1>
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<fA11 i1="01" i2="1"><s1>PATRIARCHE (G.)</s1>
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<fA11 i1="02" i2="1"><s1>LARGEAU (L.)</s1>
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<fA11 i1="03" i2="1"><s1>RIVIERE (J. P.)</s1>
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<fA11 i1="04" i2="1"><s1>LE BOURHIS (E.)</s1>
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<fA14 i1="01"><s1>Laboratoire de Photonique et de Nanostructures, CNRS UPR 20, Route de Nozay</s1>
<s2>91460 Marcoussis</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Laboratoire de Physique des Solides et de Cristallogénèse, UMR 8635, 1 Place Aristide Briand</s1>
<s2>92195 Meudon</s2>
<s3>FRA</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Université de Poitiers, Laboratoire de Métallurgie Physique, UMR 6630 CNRS, SP2MI, Téléport 2, Boulevard Marie et Pierre Curie, BP 30179</s1>
<s2>86962 Futuroscope-Chasseneuil</s2>
<s3>FRA</s3>
<sZ>4 aut.</sZ>
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<s1>© 2005 INIST-CNRS. All rights reserved.</s1>
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<fC01 i1="01" l="ENG"><s0>{111} GaAs and InSb thin foils have been deformed by a Vickers indenter at different temperatures between room temperature and 370°C and under loads ranging from 0.4 to 1.9 N. Interferometry was used to observe the indented and opposite faces of thin foils and to analyse the plastic flow throughout the samples. Attention was paid to the polarity (A or B) of the specimens, as GaAs as well as InSb are known to show large difference between a and β dislocation mobilities. A model considering the influence of polarity is proposed to describe the material flow throughout thin samples and analyse differences observed between both semiconductors.</s0>
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<fC02 i1="02" i2="3"><s0>001B60H60B</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Indentation</s0>
<s5>02</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Indentation</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Essai Vickers</s0>
<s5>03</s5>
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<fC03 i1="02" i2="X" l="ENG"><s0>Vickers test</s0>
<s5>03</s5>
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<fC03 i1="02" i2="X" l="SPA"><s0>Ensayo Vickers</s0>
<s5>03</s5>
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<s5>04</s5>
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<s5>04</s5>
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<fC03 i1="04" i2="3" l="FRE"><s0>Ecoulement plastique</s0>
<s5>05</s5>
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<fC03 i1="04" i2="3" l="ENG"><s0>Plastic flow</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Mouvement dislocation</s0>
<s5>06</s5>
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<fC03 i1="05" i2="3" l="ENG"><s0>Dislocation motion</s0>
<s5>06</s5>
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<fC03 i1="06" i2="X" l="FRE"><s0>Charge appliquée</s0>
<s5>07</s5>
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<fC03 i1="06" i2="X" l="ENG"><s0>Applied load</s0>
<s5>07</s5>
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<fC03 i1="06" i2="X" l="SPA"><s0>Carga aplicada</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Plasticité</s0>
<s5>08</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Plasticity</s0>
<s5>08</s5>
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<s5>15</s5>
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<s5>17</s5>
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<fC03 i1="10" i2="3" l="ENG"><s0>Thin films</s0>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>18</s5>
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<fC03 i1="11" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>18</s5>
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<fC03 i1="12" i2="3" l="FRE"><s0>Indium antimoniure</s0>
<s2>NK</s2>
<s5>19</s5>
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<s2>NK</s2>
<s5>19</s5>
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<fC03 i1="13" i2="3" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>52</s5>
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<s4>INC</s4>
<s5>53</s5>
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<s4>INC</s4>
<s5>54</s5>
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<s4>INC</s4>
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<s4>INC</s4>
<s5>60</s5>
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Indentation deformation of thin {111} GaAs and InSb foils : influence of polarity

Indentation deformation of thin {111} GaAs and InSb foils : influence of polarity

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri